A CDE Definition
(Resistive RAM) A category of non-volatile memory technologies that can modify the structure of a storage cell to have a conductive low resistance or non-conductive high resistance. In 2012, using silicon oxide, the University College of London (UCL) prototyped an RRAM chip that is considerably faster than flash memory while using a fraction of the power. Considered a type of memristor and also called "ReRam," commercial products are expected in 2018. See MRAM, phase change memory, programmable metallization cell and memristor.
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